用于低损耗特种玻璃熔炼的高纯致密锆英石的研制

以纯度大于99.9%(质量分数)的高纯ZrO₂和SiO₂为原料,少量TiO₂为添加剂,采用高温固相法合成高纯锆英石(ZrSiO₄)粉料。研究温度和反应时间对高纯锆英石合成效率的影响,发现粒度小于50 μm的原料粉末经1 500 ℃反应48 h后,ZrSiO₄相的含量可以达到95.77%(质量分数)。将合成的高纯锆英石粉料球磨并冷等静压成型后,在1 550 ℃高温烧结成高纯致密锆英石砖。高纯致密锆英石中杂质Fe的含量仅为29 μg/g,Cu的含量小于1 μg/g,是普通商用致密锆英石的1/10;对磷酸盐玻璃静态光吸收损耗的影响仅为普通致密锆英石材料的1/3。将这种高纯致密锆英石材料用于激光玻璃窑炉,有助于降低玻璃对1 053 nm激光的损耗,提升激光玻璃的激光性能。     

Systematical study on the roles of transition alloying substitutions on anti-disproportionation reaction of ZrCo during charging and releasing hydrogen

Intermetallic alloy ZrCo is believed to be a good substitution for uranium to store tritium. Nevertheless, disproportionation reaction often happens during the hydriding and dehydriding processes, and hydrogen storage property of ZrCo is therefore degraded. Alloying elements are often used to substitute Zr or Co in ZrCo to restrain disproportionation reaction. However, many experimental results do not agree with each other, and it lacks overall tendency for all transition metal elements. In this work, systematical ab initio calculations are performed to study more than 20 transition alloying elements to substitute Co and Zr in ZrCoH₃ to study the anti-disproportionation effects. It is found that substitution of Co by transition metal elements on anti-disproportionation reaction is unconspicuous, and only Ni can enlarge Zr–H bond length and decrease the volume of 8e site, presenting anti-disproportionation effect, which qualitatively agrees with the previous experiments. In contrast, all transition alloying elements considered except Fe, Co, Ni, Ru, Rh, Pd, Os and Ir replacing Zr can both enlarge the length of Zr–H bond and decrease the volume of 8e site, and thus restrain the disproportionation effects. At last, two-dimensional charge density and density of states are calculated to analyze the underlying mico-mechanisms affecting the effects of transition alloying elements on anti-disproportionation reaction.     

Thermal and transport properties of as-grown Ni-rich TiNi shape memory alloys

Electrical resistivity, Seebeck coefficient, specific heat and thermal conductivity measurements on the Ti_50−xNi_50+x (x = 0.0–1.6 at.%) shape memory alloys are performed to investigate their thermal and transport properties. In this study, anomalous features are observed in both cooling and heating cycles in all measured physical properties of the slightly Ni-rich TiNi alloys (x ≤ 1.0), corresponds to the transformation between the B19′ martensite and B2 austenite phases. Besides, the transition temperature is found to decrease gradually with increasing Ni content, and the driving force for the transition is also found to diminish slowly with the addition of excess Ni, as revealed by specific heat measurements. While the signature of martensitic transformation vanishes for the Ni-rich TiNi alloys with x ≥ 1.3, the characteristics of strain glass transition start to appear. The Seebeck coefficients of these TiNi alloys were found to be positive, suggesting the hole-type carriers dominate the thermoelectric transport. From the high-temperature Seebeck coefficients, the estimated value of Fermi energy ranges from ∼1.5 eV (Ti_48.4Ni_51.6) to ∼2.1 eV (Ti₅₀Ni₅₀), indicating the metallic nature of these alloys. In addition, the thermal conductivity of the slightly Ni-rich TiNi alloys with x ≤ 1.0 shows a distinct anomalous feature at the B19′ → B2 transition, likely due to the variation in lattice thermal conductivity.     

Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log I–V plot and the temperature-variable I–V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ∼10³ I_ON/I_OFF ratio, stable endurance cycles (10² cycles) and retention times (10⁴ s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ∼3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code.     

Fatigue strength dependence on the ultimate tensile strength and hardness in magnesium alloys

The relationships between fatigue strength and ultimate tensile strength as well as hardness have been studied in high-strength NZK alloys (Mg–yNd–zZn–xZr) and other magnesium alloys. In the absence of casting defects, clear linear relationships have been found between the fatigue strength and the ultimate tensile strength and the hardness values in these magnesium alloys in both T4 (solutionized) and T6 (solutionized and aged) conditions. The fatigue strength models developed in this work alloys can be directly applied to other defect-free magnesium alloys.     

Non-proportional multiaxial whole-life transformation ratchetting and fatigue failure of super-elastic NiTi shape memory alloy micro-tubes

Experimental observations are performed to investigate the non-proportional multiaxial whole-life transformation ratchetting and fatigue failure of superelastic NiTi SMA micro-tubes in stress-controlled loadings at human-body temperature (310 K). The effects of axial mean stress and stress hold on the whole-life transformation ratchetting and fatigue life are investigated with uniaxial, torsional and five different multiaxial loading paths. The results show that the stress holds on the upper or lower transformation plateaus will both promote forward and reverse transformation, and lead to shorter fatigue life. The multiaxial fatigue lives of NiTi shape memory alloy depend significantly on loading paths and applied stress levels.     

Engineering a Bacterial Tape Recorder

A method has been developed to produce and integrate single‐stranded DNA into genomic locations in bacteria in response to exogenous signals. The system functions similarly to a cellular tape recorder by writing information into DNA and reading it at a later time. Much like other cellular memory platforms, its operation is based on DNA recombinase function. However, the scalability and recording capacity have been improved over previous designs. In addition, memory storage was reversible and could be recorded in response to analogue inputs, such as light exposure. This modular memory writing system is an important addition to the genomic editing toolbox available for synthetic biology.